SQ4410EY-T1_GE3

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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SQ4410EY-T1_GE3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.5V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 10 V
Rds On (Max) @ Id, Vgs	12mOhm @ 10A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	30 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	2385 pF @ 25 V
Mounting Type	Surface Mount
Series	TrenchFET®
Supplier Device Package	8-SOIC
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Power Dissipation (Max)	5W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	SQ4410
Description	MOSFET N-CH 30V 15A 8SO

Detailed Product Description

N-Channel 30 V 15A (Tc) 5W (Tc) Surface Mount 8-SOIC

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