PSMN016-100YS,115

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Beijing Silk Road Enterprise Management Services Co.,LTD

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PSMN016-100YS,115

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Rds On (Max) @ Id, Vgs	16.3mOhm @ 15A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	2744 pF @ 50 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	LFPAK56, Power-SO8
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	51A (Tc)
Power Dissipation (Max)	117W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	PSMN016
Description	MOSFET N-CH 100V 51A LFPAK56

Detailed Product Description

N-Channel 100 V 51A (Tc) 117W (Tc) Surface Mount LFPAK56, Power-SO8

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