CSD19537Q3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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CSD19537Q3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	3.6V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Rds On (Max) @ Id, Vgs	14.5mOhm @ 10A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	1680 pF @ 50 V
Mounting Type	Surface Mount
Series	NexFET™
Supplier Device Package	8-VSON (3.3x3.3)
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	50A (Ta)
Power Dissipation (Max)	2.8W (Ta), 83W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	CSD19537
Description	MOSFET N-CH 100V 9.7A/50A 8VSON

Detailed Product Description

N-Channel 100 V 50A (Ta) 2.8W (Ta), 83W (Tc) Surface Mount 8-VSON (3.3x3.3)

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