RS3E130ATTB1

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RS3E130ATTB1

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.5V @ 2mA
Operating Temperature	150°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 10 V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 13A, 10V
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	30 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	3730 pF @ 15 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	8-SOP
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	13A (Ta)
Power Dissipation (Max)	1.4W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	RS3E
Description	PCH -30V -13A POWER MOSFET : RS3

Detailed Product Description

P-Channel 30 V 13A (Ta) 1.4W (Ta) Surface Mount 8-SOP

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