IPN70R360P7SATMA1

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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IPN70R360P7SATMA1

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	3.5V @ 150µA
Operating Temperature	-40°C ~ 150°C (TJ)
Package / Case	TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs	16.4 nC @ 10 V
Rds On (Max) @ Id, Vgs	360mOhm @ 3A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	700 V
Vgs (Max)	±16V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	517 pF @ 400 V
Mounting Type	Surface Mount
Series	CoolMOS™ P7
Supplier Device Package	PG-SOT223
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	12.5A (Tc)
Power Dissipation (Max)	7.2W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IPN70R360
Description	MOSFET N-CH 700V 12.5A SOT223

Detailed Product Description

N-Channel 700 V 12.5A (Tc) 7.2W (Tc) Surface Mount PG-SOT223

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