AOT2618L

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Beijing Silk Road Enterprise Management Services Co.,LTD

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AOT2618L

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.5V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-220-3
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Rds On (Max) @ Id, Vgs	19mOhm @ 20A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Drain to Source Voltage (Vdss)	60 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	950 pF @ 30 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	TO-220
Mfr	Alpha & Omega Semiconductor Inc.
Current - Continuous Drain (Id) @ 25°C	7A (Ta), 23A (Tc)
Power Dissipation (Max)	2.1W (Ta), 41.5W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	AOT2618
Description	MOSFET N-CH 60V 7A/23A TO220

Detailed Product Description

N-Channel 60 V 7A (Ta), 23A (Tc) 2.1W (Ta), 41.5W (Tc) Through Hole TO-220

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