STD2N62K3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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STD2N62K3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4.5V @ 50µA
Operating Temperature	150°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Rds On (Max) @ Id, Vgs	3.6Ohm @ 1.1A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	620 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	340 pF @ 50 V
Mounting Type	Surface Mount
Series	SuperMESH3™
Supplier Device Package	DPAK
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Power Dissipation (Max)	45W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	STD2N62
Description	MOSFET N-CH 620V 2.2A DPAK

Detailed Product Description

N-Channel 620 V 2.2A (Tc) 45W (Tc) Surface Mount DPAK

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