SI3430DV-T1-E3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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SI3430DV-T1-E3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs	6.6 nC @ 10 V
FET Feature	-
Product Status	Active
Mounting Type	Surface Mount
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series	-
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 250µA (Min)
Supplier Device Package	6-TSOP
Rds On (Max) @ Id, Vgs	170mOhm @ 2.4A, 10V
Mfr	Vishay Siliconix
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Power Dissipation (Max)	1.14W (Ta)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	SI3430
Description	MOSFET N-CH 100V 1.8A 6TSOP

Detailed Product Description

N-Channel 100 V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP

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