IRFP4332PBF

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IRFP4332PBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	-40°C ~ 175°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Rds On (Max) @ Id, Vgs	33mOhm @ 35A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	250 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	5860 pF @ 25 V
Mounting Type	Through Hole
Series	HEXFET®
Supplier Device Package	TO-247AC
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	57A (Tc)
Power Dissipation (Max)	360W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRFP4332
Description	MOSFET N-CH 250V 57A TO247AC

Detailed Product Description

N-Channel 250 V 57A (Tc) 360W (Tc) Through Hole TO-247AC

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