DMN2005UFG-7

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Beijing Silk Road Enterprise Management Services Co.,LTD

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DMN2005UFG-7

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	1.2V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs	164 nC @ 10 V
Rds On (Max) @ Id, Vgs	4.6mOhm @ 13.5A, 4.5V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	20 V
Vgs (Max)	±12V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	6495 pF @ 10 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	PowerDI3333-8
Mfr	Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C	18.1A (Tc)
Power Dissipation (Max)	1.05W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	DMN2005
Description	MOSFET N-CH 20V 18.1A PWRDI3333

Detailed Product Description

N-Channel 20 V 18.1A (Tc) 1.05W (Ta) Surface Mount PowerDI3333-8

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