IRFB4227PBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRFB4227PBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	-40°C ~ 175°C (TJ)
Package / Case	TO-220-3
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Rds On (Max) @ Id, Vgs	24mOhm @ 46A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	200 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	4600 pF @ 25 V
Mounting Type	Through Hole
Series	HEXFET®
Supplier Device Package	TO-220AB
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Power Dissipation (Max)	330W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRFB4227
Description	MOSFET N-CH 200V 65A TO220AB

Detailed Product Description

N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB

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