RQ3E100BNTB

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Beijing Silk Road Enterprise Management Services Co.,LTD

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RQ3E100BNTB

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.5V @ 1mA
Operating Temperature	150°C (TJ)
Package / Case	8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Rds On (Max) @ Id, Vgs	10.4mOhm @ 10A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	30 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 15 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	8-HSMT (3.2x3)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Power Dissipation (Max)	2W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	RQ3E100
Description	MOSFET N-CH 30V 10A 8HSMT

Detailed Product Description

N-Channel 30 V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

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