SI2318DS-T1-BE3

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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SI2318DS-T1-BE3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Product Status	Active
Mounting Type	Surface Mount
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds	540 pF @ 20 V
Series	-
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs	45mOhm @ 3.9A, 10V
Mfr	Vishay Siliconix
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Power Dissipation (Max)	750mW (Ta)
Package / Case	TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Technology	MOSFET (Metal Oxide)
FET Feature	-
Description	N-CHANNEL 40-V (D-S) MOSFET

Detailed Product Description

N-Channel 40 V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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