BSH111BKR

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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BSH111BKR

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	1.3V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs	0.5 nC @ 4.5 V
Rds On (Max) @ Id, Vgs	4Ohm @ 200mA, 4.5V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	55 V
Vgs (Max)	±10V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	30 pF @ 30 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	TO-236AB
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	210mA (Ta)
Power Dissipation (Max)	302mW (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	BSH111
Description	MOSFET N-CH 55V 210MA TO236AB

Detailed Product Description

N-Channel 55 V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB

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