RQ3G110ATTB

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Beijing Silk Road Enterprise Management Services Co.,LTD

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RQ3G110ATTB

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.5V @ 1mA
Operating Temperature	150°C (TJ)
Package / Case	8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Rds On (Max) @ Id, Vgs	12.4mOhm @ 11A, 10V
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	40 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	2750 pF @ 20 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	8-HSMT (3.2x3)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 35A (Tc)
Power Dissipation (Max)	2W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	RQ3G110
Description	PCH -40V -35A, HSMT8, POWER MOSF

Detailed Product Description

P-Channel 40 V 11A (Ta), 35A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

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