IXTK40P50P

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IXTK40P50P

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs	205 nC @ 10 V
Rds On (Max) @ Id, Vgs	230mOhm @ 20A, 10V
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	500 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	11500 pF @ 25 V
Mounting Type	Through Hole
Series	PolarP™
Supplier Device Package	TO-264 (IXTK)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Power Dissipation (Max)	890W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTK40
Description	MOSFET P-CH 500V 40A TO264

Detailed Product Description

P-Channel 500 V 40A (Tc) 890W (Tc) Through Hole TO-264 (IXTK)

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