IPP60R190C6XKSA1

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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IPP60R190C6XKSA1

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	3.5V @ 630µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-220-3
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V
Rds On (Max) @ Id, Vgs	190mOhm @ 9.5A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	600 V
Vgs (Max)	±20V
Product Status	Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 100 V
Mounting Type	Through Hole
Series	CoolMOS™
Supplier Device Package	PG-TO220-3
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Power Dissipation (Max)	151W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IPP60R190
Description	MOSFET N-CH 600V 20.2A TO220-3

Detailed Product Description

N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3

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