IXTF02N450

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IXTF02N450

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	6.5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	i4-Pac™-5 (3 Leads)
Gate Charge (Qg) (Max) @ Vgs	10.4 nC @ 10 V
Rds On (Max) @ Id, Vgs	750Ohm @ 10mA, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	4500 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	256 pF @ 25 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	ISOPLUS i4-PAC™
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	200mA (Tc)
Power Dissipation (Max)	78W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTF02
Description	MOSFET N-CH 4500V 200MA I4PAC

Detailed Product Description

N-Channel 4500 V 200mA (Tc) 78W (Tc) Through Hole ISOPLUS i4-PAC™

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