IXTR170P10P

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IXTR170P10P

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	240 nC @ 10 V
Rds On (Max) @ Id, Vgs	13mOhm @ 85A, 10V
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	12600 pF @ 25 V
Mounting Type	Through Hole
Series	PolarP™
Supplier Device Package	ISOPLUS247™
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	108A (Tc)
Power Dissipation (Max)	312W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTR170
Description	MOSFET P-CH 100V 108A ISOPLUS247

Detailed Product Description

P-Channel 100 V 108A (Tc) 312W (Tc) Through Hole ISOPLUS247™

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