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Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
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TK9J90E,S1E

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Beijing Silk Road Enterprise Management Services Co.,LTD

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TK9J90E,S1E

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature -
Vgs(th) (Max) @ Id 4V @ 900µA
Operating Temperature 150°C (TJ)
Package / Case TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Drain to Source Voltage (Vdss) 900 V
Vgs (Max) ±30V
Product Status Active
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Mounting Type Through Hole
Series -
Supplier Device Package TO-3P(N)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Power Dissipation (Max) 250W (Tc)
Technology MOSFET (Metal Oxide)
Base Product Number TK9J90
Description MOSFET N-CH 900V 9A TO3P
Detailed Product Description
N-Channel 900 V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)
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