IRF5802TRPBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRF5802TRPBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5.5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs	6.8 nC @ 10 V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 540mA, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	150 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	88 pF @ 25 V
Mounting Type	Surface Mount
Series	HEXFET®
Supplier Device Package	Micro6™(TSOP-6)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	900mA (Ta)
Power Dissipation (Max)	2W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRF5802
Description	MOSFET N-CH 150V 900MA MICRO6

Detailed Product Description

N-Channel 150 V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)

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