IXTH90P10P

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IXTH90P10P

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Rds On (Max) @ Id, Vgs	25mOhm @ 45A, 10V
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	5800 pF @ 25 V
Mounting Type	Through Hole
Series	PolarP™
Supplier Device Package	TO-247 (IXTH)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Power Dissipation (Max)	462W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTH90
Description	MOSFET P-CH 100V 90A TO247

Detailed Product Description

P-Channel 100 V 90A (Tc) 462W (Tc) Through Hole TO-247 (IXTH)

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