IPBE65R050CFD7AATMA1

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IPBE65R050CFD7AATMA1

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4.5V @ 1.24mA
Operating Temperature	-40°C ~ 150°C (TJ)
Package / Case	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Gate Charge (Qg) (Max) @ Vgs	102 nC @ 10 V
Rds On (Max) @ Id, Vgs	50mOhm @ 24.8A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	650 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	4975 pF @ 400 V
Mounting Type	Surface Mount
Series	Automotive, AEC-Q101, CoolMOS™ CFD7A
Supplier Device Package	PG-TO263-7-3-10
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Power Dissipation (Max)	227W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IPBE65
Description	MOSFET N-CH 650V 45A TO263-7

Detailed Product Description

N-Channel 650 V 45A (Tc) 227W (Tc) Surface Mount PG-TO263-7-3-10

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