IXFX32N100P

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IXFX32N100P

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	6.5V @ 1mA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs	225 nC @ 10 V
Rds On (Max) @ Id, Vgs	320mOhm @ 16A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	1000 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	14200 pF @ 25 V
Mounting Type	Through Hole
Series	HiPerFET™, Polar
Supplier Device Package	PLUS247™-3
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Power Dissipation (Max)	960W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXFX32
Description	MOSFET N-CH 1000V 32A PLUS247-3

Detailed Product Description

N-Channel 1000 V 32A (Tc) 960W (Tc) Through Hole PLUS247™-3

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