2N6661

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Beijing Silk Road Enterprise Management Services Co.,LTD

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2N6661

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Product Status	Active
Mounting Type	Through Hole
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 24 V
Series	-
Vgs (Max)	±20V
Package	Bag
Supplier Device Package	TO-39
Rds On (Max) @ Id, Vgs	4Ohm @ 1A, 10V
Mfr	Microchip Technology
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Power Dissipation (Max)	6.25W (Tc)
Package / Case	TO-205AD, TO-39-3 Metal Can
Drain to Source Voltage (Vdss)	90 V
Current - Continuous Drain (Id) @ 25°C	350mA (Tj)
Technology	MOSFET (Metal Oxide)
Description	MOSFET N-CH 90V 350MA TO39

Detailed Product Description

N-Channel 90 V 350mA (Tj) 6.25W (Tc) Through Hole TO-39

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