SCT3120ALGC11

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Beijing Silk Road Enterprise Management Services Co.,LTD

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SCT3120ALGC11

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5.6V @ 3.33mA
Operating Temperature	175°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 18 V
Rds On (Max) @ Id, Vgs	156mOhm @ 6.7A, 18V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Drain to Source Voltage (Vdss)	650 V
Vgs (Max)	+22V, -4V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 500 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	TO-247N
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Power Dissipation (Max)	103W (Tc)
Technology	SiCFET (Silicon Carbide)
Base Product Number	SCT3120
Description	SICFET N-CH 650V 21A TO247N

Detailed Product Description

N-Channel 650 V 21A (Tc) 103W (Tc) Through Hole TO-247N

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