G2R1000MT17D

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Beijing Silk Road Enterprise Management Services Co.,LTD

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G2R1000MT17D

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5.5V @ 500µA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 20 V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 20V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Drain to Source Voltage (Vdss)	1700 V
Vgs (Max)	+25V, -10V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	111 pF @ 1000 V
Mounting Type	Through Hole
Series	G2R™
Supplier Device Package	TO-247-3
Mfr	GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Power Dissipation (Max)	44W (Tc)
Technology	SiCFET (Silicon Carbide)
Base Product Number	G2R1000
Description	SIC MOSFET N-CH 4A TO247-3

Detailed Product Description

N-Channel 1700 V 5A (Tc) 44W (Tc) Through Hole TO-247-3

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