SI1013X-T1-GE3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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SI1013X-T1-GE3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs	1.5 nC @ 4.5 V
FET Feature	-
Product Status	Active
Mounting Type	Surface Mount
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series	TrenchFET®
Vgs (Max)	±6V
Vgs(th) (Max) @ Id	450mV @ 250µA (Min)
Supplier Device Package	SC-89-3
Rds On (Max) @ Id, Vgs	1.2Ohm @ 350mA, 4.5V
Mfr	Vishay Siliconix
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Power Dissipation (Max)	250mW (Ta)
Package / Case	SC-89, SOT-490
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	350mA (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	SI1013
Description	MOSFET P-CH 20V 350MA SC89-3

Detailed Product Description

P-Channel 20 V 350mA (Ta) 250mW (Ta) Surface Mount SC-89-3

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