IXTY1R6N100D2

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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IXTY1R6N100D2

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	Depletion Mode
Vgs(th) (Max) @ Id	-
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V
Rds On (Max) @ Id, Vgs	10Ohm @ 800mA, 0V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Drain to Source Voltage (Vdss)	1000 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	645 pF @ 25 V
Mounting Type	Surface Mount
Series	Depletion
Supplier Device Package	TO-252AA
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Power Dissipation (Max)	100W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTY1
Description	MOSFET N-CH 1000V 1.6A TO252

Detailed Product Description

N-Channel 1000 V 1.6A (Tc) 100W (Tc) Surface Mount TO-252AA

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