APT53F80J

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Beijing Silk Road Enterprise Management Services Co.,LTD

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APT53F80J

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5V @ 5mA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs	570 nC @ 10 V
Rds On (Max) @ Id, Vgs	110mOhm @ 43A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	800 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	17550 pF @ 25 V
Mounting Type	Chassis Mount
Series	POWER MOS 8™
Supplier Device Package	ISOTOP®
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	57A (Tc)
Power Dissipation (Max)	960W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	APT53F80
Description	MOSFET N-CH 800V 57A ISOTOP

Detailed Product Description

N-Channel 800 V 57A (Tc) 960W (Tc) Chassis Mount ISOTOP®

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