IRLL110TRPBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRLL110TRPBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 5 V
Rds On (Max) @ Id, Vgs	540mOhm @ 900mA, 5V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±10V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	SOT-223
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	1.5A (Tc)
Power Dissipation (Max)	2W (Ta), 3.1W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRLL110
Description	MOSFET N-CH 100V 1.5A SOT223

Detailed Product Description

N-Channel 100 V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

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