TK3R1P04PL,RQ

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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TK3R1P04PL,RQ

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.4V @ 500µA
Operating Temperature	175°C
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Rds On (Max) @ Id, Vgs	3.1mOhm @ 29A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	40 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	4670 pF @ 20 V
Mounting Type	Surface Mount
Series	U-MOSIX-H
Supplier Device Package	DPAK
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Power Dissipation (Max)	87W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	TK3R1P04
Description	MOSFET N-CHANNEL 40V 58A DPAK

Detailed Product Description

N-Channel 40 V 58A (Tc) 87W (Tc) Surface Mount DPAK

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