UJ3C120080K3S

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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UJ3C120080K3S

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	6V @ 10mA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 15 V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 12V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	12V
Package	Tube
Drain to Source Voltage (Vdss)	1200 V
Vgs (Max)	±25V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 100 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	TO-247-3
Mfr	Qorvo
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Power Dissipation (Max)	254.2W (Tc)
Technology	SiCFET (Cascode SiCJFET)
Base Product Number	UJ3C120080
Description	SICFET N-CH 1200V 33A TO247-3

Detailed Product Description

N-Channel 1200 V 33A (Tc) 254.2W (Tc) Through Hole TO-247-3

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