FDT86113LZ

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

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FDT86113LZ

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs	6.8 nC @ 10 V
Rds On (Max) @ Id, Vgs	100mOhm @ 3.3A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	315 pF @ 50 V
Mounting Type	Surface Mount
Series	PowerTrench®
Supplier Device Package	SOT-223-4
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	3.3A (Tc)
Power Dissipation (Max)	2.2W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	FDT86113
Description	MOSFET N-CH 100V 3.3A SOT223-4

Detailed Product Description

N-Channel 100 V 3.3A (Tc) 2.2W (Ta) Surface Mount SOT-223-4

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