IXFA22N65X2

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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IXFA22N65X2

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5.5V @ 1.5mA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Rds On (Max) @ Id, Vgs	160mOhm @ 11A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	650 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	2310 pF @ 25 V
Mounting Type	Surface Mount
Series	HiPerFET™, Ultra X2
Supplier Device Package	TO-263HV
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Power Dissipation (Max)	390W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXFA22
Description	MOSFET N-CH 650V 22A TO263

Detailed Product Description

N-Channel 650 V 22A (Tc) 390W (Tc) Surface Mount TO-263HV

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