IXTY01N100

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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IXTY01N100

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4.5V @ 25µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs	6.9 nC @ 10 V
Rds On (Max) @ Id, Vgs	80Ohm @ 100mA, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	1000 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	54 pF @ 25 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	TO-252AA
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	100mA (Tc)
Power Dissipation (Max)	25W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTY01
Description	MOSFET N-CH 1000V 100MA TO252AA

Detailed Product Description

N-Channel 1000 V 100mA (Tc) 25W (Tc) Surface Mount TO-252AA

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