PMV30UN2R

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Beijing Silk Road Enterprise Management Services Co.,LTD

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PMV30UN2R

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	900mV @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 4.5 V
Rds On (Max) @ Id, Vgs	32mOhm @ 4.2A, 4.5V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	20 V
Vgs (Max)	±12V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	655 pF @ 10 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	TO-236AB
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta)
Power Dissipation (Max)	490mW (Ta), 5W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	PMV30
Description	MOSFET N-CH 20V 4.2A TO236AB

Detailed Product Description

N-Channel 20 V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB

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