AOT410L

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Beijing Silk Road Enterprise Management Services Co.,LTD

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AOT410L

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-220-3
Gate Charge (Qg) (Max) @ Vgs	129 nC @ 10 V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 20A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tube
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±25V
Product Status	Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds	7950 pF @ 50 V
Mounting Type	Through Hole
Series	SDMOS™
Supplier Device Package	TO-220
Mfr	Alpha & Omega Semiconductor Inc.
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 150A (Tc)
Power Dissipation (Max)	1.9W (Ta), 333W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	AOT410
Description	MOSFET N-CH 100V 12A/150A TO220

Detailed Product Description

N-Channel 100 V 12A (Ta), 150A (Tc) 1.9W (Ta), 333W (Tc) Through Hole TO-220

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