SI2310B-TP

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Beijing Silk Road Enterprise Management Services Co.,LTD

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SI2310B-TP

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	1.3V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs	105mOhm @ 3A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	60 V
Vgs (Max)	±16V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	247 pF @ 30 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	SOT-23
Mfr	Micro Commercial Co
Current - Continuous Drain (Id) @ 25°C	3A (Tj)
Power Dissipation (Max)	1.2W
Technology	MOSFET (Metal Oxide)
Base Product Number	SI2310
Description	MOSFET N-CH 60V 3A SOT23

Detailed Product Description

N-Channel 60 V 3A (Tj) 1.2W Surface Mount SOT-23

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