EPC2010C

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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EPC2010C

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.5V @ 3mA
Operating Temperature	-40°C ~ 150°C (TJ)
Package / Case	Die
Gate Charge (Qg) (Max) @ Vgs	5.3 nC @ 5 V
Rds On (Max) @ Id, Vgs	25mOhm @ 12A, 5V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	200 V
Vgs (Max)	+6V, -4V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	540 pF @ 100 V
Mounting Type	Surface Mount
Series	eGaN®
Supplier Device Package	Die
Mfr	EPC
Current - Continuous Drain (Id) @ 25°C	22A (Ta)
Power Dissipation (Max)	-
Technology	GaNFET (Gallium Nitride)
Base Product Number	EPC20
Description	GANFET N-CH 200V 22A DIE OUTLINE

Detailed Product Description

N-Channel 200 V 22A (Ta) Surface Mount Die

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