SI1012CR-T1-GE3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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SI1012CR-T1-GE3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	1V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	SC-75, SOT-416
Gate Charge (Qg) (Max) @ Vgs	2 nC @ 8 V
Rds On (Max) @ Id, Vgs	396mOhm @ 600mA, 4.5V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	20 V
Vgs (Max)	±8V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	43 pF @ 10 V
Mounting Type	Surface Mount
Series	TrenchFET®
Supplier Device Package	SC-75A
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	630mA (Ta)
Power Dissipation (Max)	240mW (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	SI1012
Description	MOSFET N-CH 20V SC75A

Detailed Product Description

N-Channel 20 V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A

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