IRLR3410TRPBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRLR3410TRPBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 5 V
Rds On (Max) @ Id, Vgs	105mOhm @ 10A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±16V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V
Mounting Type	Surface Mount
Series	HEXFET®
Supplier Device Package	D-Pak
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Power Dissipation (Max)	79W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRLR3410
Description	MOSFET N-CH 100V 17A DPAK

Detailed Product Description

N-Channel 100 V 17A (Tc) 79W (Tc) Surface Mount D-Pak

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