SI2343DS-T1-E3

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SI2343DS-T1-E3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	3V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Rds On (Max) @ Id, Vgs	53mOhm @ 4A, 10V
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	30 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	540 pF @ 15 V
Mounting Type	Surface Mount
Series	TrenchFET®
Supplier Device Package	SOT-23-3 (TO-236)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta)
Power Dissipation (Max)	750mW (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	SI2343
Description	MOSFET P-CH 30V 3.1A SOT23-3

Detailed Product Description

P-Channel 30 V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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