FDV303N

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Beijing Silk Road Enterprise Management Services Co.,LTD

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FDV303N

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	1.5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs	2.3 nC @ 4.5 V
Rds On (Max) @ Id, Vgs	450mOhm @ 500mA, 4.5V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	25 V
Vgs (Max)	±8V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 10 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	SOT-23-3
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	680mA (Ta)
Power Dissipation (Max)	350mW (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	FDV303
Description	MOSFET N-CH 25V 680MA SOT23

Detailed Product Description

N-Channel 25 V 680mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

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