G3R160MT12D

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Beijing Silk Road Enterprise Management Services Co.,LTD

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G3R160MT12D

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.69V @ 5mA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 15 V
Rds On (Max) @ Id, Vgs	192mOhm @ 10A, 15V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube
Drain to Source Voltage (Vdss)	1200 V
Vgs (Max)	±15V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	730 pF @ 800 V
Mounting Type	Through Hole
Series	G3R™
Supplier Device Package	TO-247-3
Mfr	GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Power Dissipation (Max)	123W (Tc)
Technology	SiCFET (Silicon Carbide)
Base Product Number	G3R160
Description	SIC MOSFET N-CH 22A TO247-3

Detailed Product Description

N-Channel 1200 V 22A (Tc) 123W (Tc) Through Hole TO-247-3

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