IXTN22N100L

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

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IXTN22N100L

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5.5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 15 V
Rds On (Max) @ Id, Vgs	600mOhm @ 11A, 20V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Drain to Source Voltage (Vdss)	1000 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	7050 pF @ 25 V
Mounting Type	Chassis Mount
Series	Linear
Supplier Device Package	SOT-227B
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Power Dissipation (Max)	700W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTN22
Description	MOSFET N-CH 1000V 22A SOT227B

Detailed Product Description

N-Channel 1000 V 22A (Tc) 700W (Tc) Chassis Mount SOT-227B

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