DMN2011UFDF-7

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Beijing Silk Road Enterprise Management Services Co.,LTD

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DMN2011UFDF-7

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	1V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	6-UDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 7A, 4.5V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	20 V
Vgs (Max)	±12V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	2248 pF @ 10 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	U-DFN2020-6 (Type F)
Mfr	Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C	14.2A (Ta)
Power Dissipation (Max)	2.1W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	DMN2011
Description	MOSFET N-CH 20V 14.2A 6UDFN

Detailed Product Description

N-Channel 20 V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F)

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