TK100S04N1L,LQ

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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TK100S04N1L,LQ

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.5V @ 500µA
Operating Temperature	175°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs	76 nC @ 10 V
Rds On (Max) @ Id, Vgs	2.3mOhm @ 50A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	40 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	5490 pF @ 10 V
Mounting Type	Surface Mount
Series	U-MOSVIII-H
Supplier Device Package	DPAK+
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Power Dissipation (Max)	100W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	TK100S04
Description	MOSFET N-CH 40V 100A DPAK

Detailed Product Description

N-Channel 40 V 100A (Ta) 100W (Tc) Surface Mount DPAK+

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