STP21N65M5

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

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STP21N65M5

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	150°C (TJ)
Package / Case	TO-220-3
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Rds On (Max) @ Id, Vgs	190mOhm @ 8.5A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	650 V
Vgs (Max)	±25V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	1950 pF @ 100 V
Mounting Type	Through Hole
Series	MDmesh™ V
Supplier Device Package	TO-220
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Power Dissipation (Max)	125W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	STP21
Description	MOSFET N-CH 650V 17A TO220AB

Detailed Product Description

N-Channel 650 V 17A (Tc) 125W (Tc) Through Hole TO-220

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