IRF530

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRF530

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Product Status	Obsolete
Mounting Type	Through Hole
Package	Tube
Input Capacitance (Ciss) (Max) @ Vds	670 pF @ 25 V
Series	-
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Rds On (Max) @ Id, Vgs	160mOhm @ 8.4A, 10V
Mfr	onsemi
Operating Temperature	-55°C ~ 175°C (TJ)
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	88W (Tc)
Package / Case	TO-220-3
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Technology	MOSFET (Metal Oxide)
FET Feature	-
Description	MOSFET N-CH 100V 14A TO220AB

Detailed Product Description

N-Channel 100 V 14A (Tc) 88W (Tc) Through Hole TO-220AB

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